摘要： Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm2 and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 104. The relatively low mobility is attributed to the small grain size of 0.1-1 m with a trap charge density in grain boundaries of the order of 1013 cm-2. 其他題名： MRX 其他題名： Mater. Res. Express 出版者： IOP Publishing 出版日期： 2016-06-01 出處： Materials Research Express, 2016-06, Vol.3 (6) 資源來源： Institute of Physics Journals 版權： 2016 IOP Publishing Ltd 識別號： EISSN: 2053-1591 識別號： DOI: 10.1088/2053-1591/3/6/065007
