Anelasticity of GaN Epitaxial Layer in GaN LED

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101998

Title:	Anelasticity of GaN Epitaxial Layer in GaN LED
Authors:	劉正毓;Chung, C C;Yang, C T;Liu, C Y
Contributors:	工學院化學工程與材料工程學系
Keywords:	Anelasticity;Devices;Gallium nitrides;GaN LEDs;piezoelectric material;Piezoelectricity;Thermal strain;Time dependence;Time measurement;Voltage
Date:	2016-10-01
Issue Date:	2026-04-21 14:55:28 (UTC+8)
Publisher:	IOP Publishing Ltd.;IOP Publishing
Abstract:	摘要： In this work, the anelasticity of the GaN layer in the GaN light-emitting-diode device was studied. The present results show that the forward-voltage of GaN LED increases with time, as the GaN light-emitting-diode was maintained at a constant temperature of 100 °C. We found that the increase of the forward-voltage with time attributes to the delay-response of the piezoelectric fields (internal electrical fields in GaN LED device). And, the delay-response of the internal electrical fields with time is caused by the anelasticity (time-dependent strain) of the GaN layer. Therefore, using the correlation of strain-piezoelectric-forward voltage, a plot of thermal strain of the GaN layer against time can be obtained by measuring the forward-voltage of the studied GaN LED against time. With the curves of the thermal strain of GaN epi-layers versus time, the anelasticity of the GaN compound can be studied. The key anelasticity parameter, characteristic relaxation time, of the GaN is defined to be 2623.76 min in this work. 其他題名： MRX 其他題名： Mater. Res. Express 出版者： IOP Publishing 出版日期： 2016-10-01 出處： Materials Research Express, 2016-10, Vol.3 (10), p.105026-105026 資源來源： Institute of Physics Journals 版權： 2016 IOP Publishing Ltd 識別號： ISSN: 2053-1591 識別號： EISSN: 2053-1591 識別號： DOI: 10.1088/2053-1591/3/10/105026
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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