In Situ Electromigration in Cu-Sn and Ni-Sn Critical Solder Length for Three-Dimensional Integrated Circuits

NCUIR > Engineering College > Department of Chemical and Materials Engineering > journal & Dissertation > Item 987654321/102027

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/102027

Title:	In Situ Electromigration in Cu-Sn and Ni-Sn Critical Solder Length for Three-Dimensional Integrated Circuits
Authors:	吳子嘉;Huang, Y. T.;Chen, C. H.;Lee, B. H.;Chen, H. C.;Wang, C. M.;Wu, Albert T.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Characterization and Evaluation of Materials;Chemistry and Materials Science;Electronics and Microelectronics;Instrumentation;Integrated circuits;Materials Science;Microstructure;Optical and Electronic Materials;Soldering;Solid State Physics;Studies
Date:	2016-12-01
Issue Date:	2026-04-21 14:57:15 (UTC+8)
Publisher:	Springer New York;New York: Springer US
Abstract:	摘要： An in situ electromigration study has been conducted on U-groove Cu/Sn-3.5Ag/Cu and Ni/Sn-3.5Ag/Ni sandwich structures; the results were used to simulate microsolder joints passing current density of 1 × 10 4 A/cm 2 at 150°C. The solder gap was only 15 μ m, shorter than the critical length of Sn-3.5Ag solder. Backstress was proved to exist at critical solder lengths and to influence the electromigration mechanism. Theoretical calculations of the diffusivity of Cu and Ni in Sn solder indicated that the degree to which the dominant diffusion species (Cu or Ni atoms) diffused through the solder line is retarded by the backstress effect. The morphologies of intermetallic compounds (IMCs) were observed, and the grain boundaries in Sn solder were measured using electron backscatter diffraction to determine the kinetics of intermetallic growth. The results reveal that the unique electromigration characteristics of microbump joints, including the diffusivity, morphology, and backstress, can be determined. The retardation of atomic migration improves the reliability against electromigration. 其他題名： Journal of Elec Materi 出版者： New York: Springer US 出版日期： 2016-12-01 出處： Journal of electronic materials, 2016-12, Vol.45 (12), p.6163-6170 資源來源： EBSCOhost OmniFile Full Text Select 版權： The Minerals, Metals & Materials Society 2016 版權： Journal of Electronic Materials is a copyright of Springer, 2016. 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-016-4874-x 識別號： CODEN: JECMA5
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	37	View/Open

社群 sharing

Loading...