Experimental determination of electron affinities for InN and gan polar surfaces

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Title:	Experimental determination of electron affinities for InN and gan polar surfaces
Authors:	林世昌;Lin, Shih-Chieh;Kuo, Cheng-Tai;Liu, Xiaoge;Liang, Li-Yen;Cheng, Ching-Hung;Lin, Chung-Huang;Tang, Shu-Jung;Chang, Lo-Yueh;Chen, Chia-Hao;Gwo, Shangjr
Contributors:	生醫理工學院生命科學系
Date:	2012-03-01
Issue Date:	2026-04-23 11:12:40 (UTC+8)
Publisher:	Japan Society of Applied Physics;The Japan Society of Applied Physics
Abstract:	摘要： We have measured the electron affinities of clean, stoichiometric InN and GaN polar surfaces via ultraviolet photoelectron spectroscopy. The electron affinities of InN were measured to be 4.7 and 4.6 eV for In- and N-polar surfaces, respectively. In contrast, the electron affinities of GaN vary greatly with the film polarity, i.e., 3.8 and 3.3 eV for Ga- and N-polar surfaces, respectively. We propose that the difference between polar surfaces originates from the spontaneous polarization effect. Furthermore, it's closely related to the film carrier concentration. With the measured electron affinities, we are able to confirm the known polar heterojunction band alignments. 出版者： The Japan Society of Applied Physics 出版日期： 2012-03-01 出處： Applied physics express, 2012-03, Vol.5 (3), p.031003-031003-3 資源來源： Institute of Physics Journals 識別號： ISSN: 1882-0778 識別號： EISSN: 1882-0786 識別號： DOI: 10.1143/APEX.5.031003
Appears in Collections:	[Department of Life Science] journal & Dissertation

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