A Fully Transparent Resistive Memory for Harsh Environments

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題名:	A Fully Transparent Resistive Memory for Harsh Environments
作者:	楊伯康;Yang, Po-Kang;Ho, Chih-Hsiang;Lien, Der-Hsien;Durán Retamal, José Ramón;Kang, Chen-Fang;Chen, Kuan-Ming;Huang, Teng-Han;Yu, Yueh-Chung;Wu, Chih-I;He, Jr-Hau
貢獻者:	生醫理工學院生醫科學與工程學系
關鍵詞:	639/638/298/917;639/925/927/1007;Adsorption;Computer engineering;Electronics;Hafnium;Harsh environments;High temperature;Humanities and Social Sciences;Investigations;Irradiation;Metal oxides;multidisciplinary;Radiation;Random access memory;Relative humidity;Retention;Retention time;Science
日期:	2015-10-12
上傳時間:	2026-04-23 11:14:35 (UTC+8)
出版者:	Nature Publishing Group;London: Nature Publishing Group UK
摘要:	摘要： A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO 2 ) with excellent transparency, resistive switching capability and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10 4 sec and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO 2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure and proton irradiation. Moreover, HfO 2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO 2 TRRAM for harsh environments. 其他題名： Sci Rep 出版者： London: Nature Publishing Group UK 出版日期： 2015-10-12 出處： Scientific reports, 2015-10, Vol.5 (1), p.15087-15087, Article 15087 資源來源： Publicly Available Content Database (Proquest) 版權： The Author(s) 2015 版權： Copyright Nature Publishing Group Oct 2015 版權： Copyright © 2015, Macmillan Publishers Limited 2015 Macmillan Publishers Limited 識別號： ISSN: 2045-2322 識別號： EISSN: 2045-2322 識別號： DOI: 10.1038/srep15087 識別號： PMID: 26455819
顯示於類別:	[生醫科學與工程學系] 期刊論文

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