Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/102734

Title:	Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory
Authors:	楊伯康;Huang, Teng-Han;Yang, Po-Kang;Chang, Wen-Yuan;Chien, Jui-Fen;Kang, Chen-Fang;Chen, Miin-Jang;He, Jr-Hau
Contributors:	生醫理工學院生醫科學與工程學系
Date:	2013-12-07
Issue Date:	2026-04-23 11:15:51 (UTC+8)
Publisher:	Royal Society of Chemistry;Royal Society of Chemistry (RSC)
Abstract:	出版者： Royal Society of Chemistry (RSC) 出版日期： 2013-01-01 出處： Journal of Materials Chemistry C, 2013-01, Vol.1 (45), p.7593- 資源來源： Royal Society of Chemistry 識別號： ISSN: 2050-7526 識別號： EISSN: 2050-7534 識別號： DOI: 10.1039/c3tc31542h
Appears in Collections:	[Department of Biomedical Sciences and Engineering ] journal & Dissertation

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