Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

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Title:	Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory
Authors:	楊伯康;Durán Retamal, José Ramón;Kang, Chen-Fang;Yang, Po-Kang;Lee, Chuan-Pei;Lien, Der-Hsien;Ho, Chih-Hsiang;He, Jr-Hau
Contributors:	生醫理工學院生醫科學與工程學系
Date:	2014-11-03
Issue Date:	2026-04-23 11:16:56 (UTC+8)
Publisher:	American Institute of Physics
Abstract:	出版日期： 2014-11-03 出處： Applied physics letters, 2014-11, Vol.105 (18), p.182101 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4901072
Appears in Collections:	[Department of Biomedical Sciences and Engineering ] journal & Dissertation

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