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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/102888


    Title: Probing substrate influence on graphene by analyzing raman lineshapes
    Authors: 黃貞翰;Huang, Chen-Han;Lin, Hsing-Ying;Huang, Cheng-Wen;Liu, Yi-Min;Shih, Fu-Yu;Wang, Wei-Hua;Chui, Hsiang-Chen
    Contributors: 生醫理工學院生醫科學與工程學系
    Keywords: Bandwidths;Chemistry and Materials Science;Doping;EMN Meeting;Graphene;Immunoglobulins;Impurities;Materials Science;Molecular Medicine;Nano Express;Nanochemistry;Nanoscale Science and Technology;Nanotechnology;Nanotechnology and Microengineering;Raman spectroscopy
    Date: 2014-01-01
    Issue Date: 2026-04-23 11:19:24 (UTC+8)
    Publisher: Springer New York;New York: Springer New York
    Abstract: 摘要: We provide a new approach to identify the substrate influence on graphene surface. Distinguishing the substrate influences or the doping effects of charged impurities on graphene can be realized by optically probing the graphene surfaces, included the suspended and supported graphene. In this work, the line scan of Raman spectroscopy was performed across the graphene surface on the ordered square hole. Then, the bandwidths of G-band and 2D-band were fitted into the Voigt profile, a convolution of Gaussian and Lorentzian profiles. The bandwidths of Lorentzian parts were kept as constant whether it is the suspended and supported graphene. For the Gaussian part, the suspended graphene exhibits much greater Gaussian bandwidths than those of the supported graphene. It reveals that the doping effect on supported graphene is stronger than that of suspended graphene. Compared with the previous studies, we also used the peak positions of G bands, and I 2D / I G ratios to confirm that our method really works. For the suspended graphene, the peak positions of G band are downshifted with respect to supported graphene, and the I 2D / I G ratios of suspended graphene are larger than those of supported graphene. With data fitting into Voigt profile, one can find out the information behind the lineshapes.
    其他題名: Nanoscale Res Lett
    出版者: New York: Springer New York
    出版日期: 2014-02-07
    出處: Nanoscale research letters, 2014-02, Vol.9 (1), p.64-64, Article 64
    資源來源: Publicly Available Content Database (Proquest)
    版權: Huang et al.; licensee Springer. 2014. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
    版權: Copyright Springer Nature B.V. Dec 2014
    版權: Copyright © 2014 Huang et al.; licensee Springer. 2014 Huang et al.; licensee Springer.
    識別號: ISSN: 1556-276X
    識別號: ISSN: 1931-7573
    識別號: EISSN: 1556-276X
    識別號: DOI: 10.1186/1556-276X-9-64
    識別號: PMID: 24506825
    Appears in Collections:[Department of Biomedical Sciences and Engineering ] journal & Dissertation

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