Resistive memory for harsh electronics: Immunity to surface effect and high corrosion resistance via surface modification

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題名:	Resistive memory for harsh electronics: Immunity to surface effect and high corrosion resistance via surface modification
作者:	楊伯康;Huang, Teng-Han;Yang, Po-Kang;Lien, Der-Hsien;Kang, Chen-Fang;Tsai, Meng-Lin;Chueh, Yu-Lun;He, Jr-Hau
貢獻者:	生醫理工學院生醫科學與工程學系
關鍵詞:	639/166/987;639/301/357/995;639/638/542;639/925/927/1007;Humanities and Social Sciences;multidisciplinary;Science
日期:	2014-03-18
上傳時間:	2026-04-23 11:20:05 (UTC+8)
出版者:	Nature Publishing Group;London: Springer Science and Business Media LLC
摘要:	摘要： The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics. 其他題名： Sci Rep 出版者： London: Springer Science and Business Media LLC 出版日期： 2014-03-18 出處： Scientific Reports, 2014-03, Vol.4 (1), p.4402-, Article 4402 資源來源： Springer Nature Link (Free) 版權： The Author(s) 2014 版權： Copyright © 2014, Macmillan Publishers Limited. All rights reserved 2014 Macmillan Publishers Limited. All rights reserved 識別號： ISSN: 2045-2322 識別號： EISSN: 2045-2322 識別號： DOI: 10.1038/srep04402 識別號： PMID: 24638086
顯示於類別:	[生醫科學與工程學系] 期刊論文

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