Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/103002

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103002

Title:	Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature
Authors:	李建階;Chu, Yen-Ho;Lee, Chien-Chieh;Chang, Teng-Hsiang;Hsieh, Yu-Lin;Liu, Shian-Ming;Chang, Jenq-Yang;Li, Tomi T.;Chen, I-Chen
Contributors:	光電科學研究中心
Date:	2015-03-15
Issue Date:	2026-04-23 11:21:41 (UTC+8)
Publisher:	Elsevier;Elsevier BV
Abstract:	出版者： Elsevier BV 出版日期： 2015-03 出處： Journal of Non-Crystalline Solids, 2015-03, Vol.412, p.5-10 識別號： ISSN: 0022-3093 識別號： DOI: 10.1016/j.jnoncrysol.2014.12.032
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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