All-polymer field-effect transistors using a brush gate dielectric

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題名:	All-polymer field-effect transistors using a brush gate dielectric
作者:	張瑞芬;Rodríguez, Ana B.;Tomlinson, Michael R.;Khodabakhsh, Saghar;Chang, Jui-Fen;Cousin, Fabrice;Lott, Dieter;Sirringhaus, Henning;Huck, Wilhelm T. S.;Higgins, Anthony M.;Geoghegan, Mark
貢獻者:	理學院光電科學與工程學系
關鍵詞:	Annealing;Asymmetry;Brushes;Devices;Dielectrics;Heat treatment;Molecular weight;Polymethyl methacrylates
日期:	2013-12-14
上傳時間:	2026-04-23 11:22:35 (UTC+8)
出版者:	Royal Society of Chemistry
摘要:	摘要： Interfaces between a poly(3-hexylthiophene) [P3HT] and an end-grafted (brush) layer of poly(methyl methacrylate) [PMMA] are shown using neutron reflectometry to be dependent on heat treatment. Annealing the samples allows part of the brush layer to cross into the P3HT layer creating a very asymmetric interface. We suggest that the P3HT rearrangement occurs, creating space for movement of the brush into the film. This interpenetration was observed with two different molecular weight (17.5 and 28 kg mol super(-1)) P3HT films. Output characteristics of devices made from P3HT layers on PMMA brushes show that different amounts of heat treatment do not significantly change the device performance. Saturated hole mobilities are dependent on heat treatment, with devices made from a smaller molecular weight P3HT (22 kg mol super(-1)) demonstrating larger mobilities than devices created using 48 kg mol super(-1) P3HT, but only after heat treatment. 出版日期： 2013-01-01 出處： Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (46), p.7736-7741 資源來源： Royal Society of Chemistry 識別號： ISSN: 2050-7526 識別號： ISSN: 2050-7534 識別號： EISSN: 2050-7534 識別號： DOI: 10.1039/c3tc31076k
顯示於類別:	[光電科學與工程學系] 期刊論文

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