摘要： SiO2 nanorod arrays (NRAs) are fabricated on InGaN-based multiple quantum well (MQW) solar cells using self-assembled Ag nanoparticles as the etching mask and subsequent reactive ion etching. The SiO2 NRAs effectively suppress the undesired surface reflections over the wavelengths from 330 to 570nm, which is attributed to the light-trapping effect and the improved mismatch of refractive index at the air/MQW device interface. Under the air mass 1.5 global illumination, the conversion efficiency of the solar cell is enhanced by ∼21% largely due to increased short-circuit current from 0.71 to 0.76mA/cm2. The enhanced device performances by the optical absorption improvement are supported by the simulation analysis as well. ► SiO2 nanorod arrays (NRAs) are fabricated on InGaN-based solar cells. ► SiO2 NRA layer exhibits superior antireflective performances. ► SiO2 NRAs improve the optical absorption in the active regions. ► The conversion efficiency of the solar cell is enhanced by 21%. ► The enhanced device performances are supported by the simulation analysis. 出版者： Amsterdam: Elsevier B.V 出版日期： 2012-08-01 出處： Solar energy materials and solar cells, 2012-08, Vol.103, p.194-198 資源來源： Elsevier ScienceDirect Journals 版權： 2012 版權： 2015 INIST-CNRS 識別號： ISSN: 0927-0248 識別號： EISSN: 1879-3398 識別號： DOI: 10.1016/j.solmat.2012.04.007
