Atomic layer deposition of aluminum-doped zinc oxide films for the light harvesting enhancement of a nanostructured silicon solar cell

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103109

Title:	Atomic layer deposition of aluminum-doped zinc oxide films for the light harvesting enhancement of a nanostructured silicon solar cell
Authors:	陳昇暉;Chen, Sheng-Hui;Chan, Shih-Hao;Chen, Chun-Ko;Tseng, Shao-Ze;Hsu, Chieh-Hsiang;Cho, Wen-Hao
Contributors:	理學院光電科學與工程學系
Date:	2013-01-01
Issue Date:	2026-04-23 11:23:29 (UTC+8)
Publisher:	AVS Science and Technology Society
Abstract:	摘要： Anodic-aluminum-oxide (AAO) template lithography and atomic layer deposition (ALD) antireflection coating techniques have often been applied for the fabrication of wide-angle antireflection structures on silicon solar cells. In this study, an AAO template was fabricated as a mask to block the high density plasma dry etching from the crystalline silicon to form nanostructures on the surface of the crystalline silicon wafer. Then, a 55-nm-thick aluminum-doped zinc oxide (AZO) film was deposited on the silicon nanostructures using the ALD method. The results show that the application of a nanostructured AZO film can decrease the average reflectivity of the crystalline silicon to 0.83% in the wavelength range from 400 to 850 nm for an incident angle of 8°. The conversion efficiency of the nanostructured silicon solar cell can be enhanced from 6.93% to 8.37%. 出版日期： 2013-01 出處： Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-01, Vol.31 (1) 資源來源： AIP Journals (American Institute of Physics) 版權： American Vacuum Society 識別號： ISSN: 0734-2101 識別號： EISSN: 1520-8559 識別號： DOI: 10.1116/1.4767837 識別號： CODEN: JVTAD6
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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