Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103123

Title:	Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
Authors:	賴昆佑;Hus, Jui-Wei;Chen, Chien-Chia;Lee, Ming-Jui;Liu, Hsueh-Hsing;Chyi, Jen-Inn;Huang, Michael R. S.;Liu, Chuan-Pu;Wei, Tzu-Chiao;He, Jr-Hau;Lai, Kun-Yu
Contributors:	理學院光電科學與工程學系
Keywords:	Buffers;Electrical Equipment and Supplies;Gallium - chemistry;Gallium nitrides;GaN;Indium gallium nitrides;nano-heteroepitaxy;Nanorods;Nanostructure;Nanotechnology - instrumentation;Nanotechnology - methods;Nanotubes - chemistry;quantum well;semipolar;Si substrate;Silicon - chemistry;Silicon substrates;Variability;Zinc oxide
Date:	2015-09-01
Issue Date:	2026-04-23 11:23:50 (UTC+8)
Publisher:	Wiley-Blackwell;Germany: Blackwell Publishing Ltd
Abstract:	摘要： Semipolar 101¯1 InGaN quantum wells are grown on (001) Si substrates with an Al‐free buffer and wafer‐scale uniformity. The novel structure is achieved by a bottom‐up nano‐heteroepitaxy employing self‐organized ZnO nanorods as the strain‐relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN‐based buffer, which grows slowly and contaminates the growth chamber. 其他題名： Adv. Mater 出版者： Germany: Blackwell Publishing Ltd 出版日期： 2015-09-02 出處： Advanced materials (Weinheim), 2015-09, Vol.27 (33), p.4845-4850 資源來源： Wiley Online Library All Journals 版權： 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 識別號： ISSN: 0935-9648 識別號： ISSN: 1521-4095 識別號： EISSN: 1521-4095 識別號： DOI: 10.1002/adma.201501538 識別號： PMID: 26178685
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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