Crystallization phase transition in the precursors of CIGS films by Ar-ion plasma etching process

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题名:	Crystallization phase transition in the precursors of CIGS films by Ar-ion plasma etching process
作者:	陳昇暉;Lin, Wei-Ting;Chen, Sheng-Hui;Chan, Shih-Hao;Hu, Sung-Cheng;Peng, Wan-Xuan;Lu, Yung-Tien
贡献者:	理學院光電科學與工程學系
关键词:	Annealing;Ar-ion;CIGS;Crystallization;Deposition;Phase transformations;Phase-transition;Plasma etching;Precursors;Surface layer;Texture
日期:	2014-01-01
上传时间:	2026-04-23 11:25:25 (UTC+8)
出版者:	Elsevier Ltd.;Elsevier Ltd
摘要:	摘要： Mixed alloy Cu–In–Ga precursors were deposited from Cu–Ga alloy and Indium targets by the DC magnetron co-sputtering method. There were four crystallization phases, In, CuIn2, Cu11In9 and Cu3Ga, identified in the precursor after deposition. A large grain-size CIGS film was achieved by controlling the annealing period for selenization and utilizing a two-stage selenization process for secondary crystallization during rapid thermal annealing process. As the annealing temperature increased, the phase transitions moved toward the Cu-rich inter-metallic phases. In addition, the phase transition, stoichiometric ratio and surface-morphology were modified by Ar-ion plasma etching process of the precursors. The results show that after the ion etching process, the precursors can be transferred into a single Cu11In9 crystallization phase and the number of crevices increased due to the soft texture of indium on the surface of the precursors. Finally, CIGS films with good crystalline properties were achieved after a suitable selenization process of only 1-stage. •The effect of the CIG precursors was dependent on the Ar-ion etching process.•The CIG precursor phase could be controlled to achieve the Cu11In9 single phase.•Se was deposited into the precursors and doping of Ga into the crystalline.•The good CIGS crystalline was achieved with a better reaction during selenization. 出版者： Elsevier Ltd 出版日期： 2014-01 出處： Vacuum, 2014-01, Vol.99, p.1-6 版權： 2013 Elsevier Ltd 識別號： ISSN: 0042-207X 識別號： EISSN: 1879-2715 識別號： DOI: 10.1016/j.vacuum.2013.04.012
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