Effect of the hydrogen concentration on the growth mechanism of sputtered hydrogenated silicon thin films

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題名:	Effect of the hydrogen concentration on the growth mechanism of sputtered hydrogenated silicon thin films
作者:	陳昇暉;Lin, Hung-Ju;Chen, Sheng-Hui
貢獻者:	理學院光電科學與工程學系
關鍵詞:	Approximation;Fourier transforms;Hydrogen storage;Infrared spectroscopy;Mathematical analysis;Silicon films;Thin films;Void fraction
日期:	2013-09-20
上傳時間:	2026-04-23 11:28:00 (UTC+8)
出版者:	The Optical Society;Optica Publishing Group
摘要:	摘要： The method of elastic recoil detection (ERD) has been utilized to analyze the actual hydrogen concentration in hydrogenated silicon thin films and has been demonstrated to provide more stable and accurate analysis for quantification of the hydrogen concentration than does Fourier Transform Infrared Spectroscopy. In order to realize the quality of thin films, spectroscopic ellipsometry and the applied effective medium approximation (EMA) theory of the Maxwell-Garnett and Bruggeman models are applied to deducing the effective refractive index of the films. The relative void fractions corresponding to amorphous silicon films with lowest hydrogen flow could be obtained based on the EMA theory. Therefore, this study found an important linear relationship between the hydrogen concentration and structural relaxation as a consequence of the void fraction induced by the hydrogen flow. 出版者： Optica Publishing Group 出版日期： 2013-09-01 出處： Optical Materials Express, 2013-09, Vol.3 (9), p.1215--1222 資源來源： Optica Journals (NTUSG) 識別號： ISSN: 2159-3930 識別號： EISSN: 2159-3930 識別號： DOI: 10.1364/ome.3.001215
顯示於類別:	[光電科學與工程學系] 期刊論文

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