Efficiency dip observed with InGaN-based multiple quantum well solar cells

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103320

Title:	Efficiency dip observed with InGaN-based multiple quantum well solar cells
Authors:	賴昆佑;Lai, K. Y.;Lin, G. J.;Wu, Yuh-Renn;Tsai, Meng-Lun;He, Jr-Hau
Contributors:	理學院光電科學與工程學系
Date:	2014-01-01
Issue Date:	2026-04-23 11:28:03 (UTC+8)
Publisher:	United States
Abstract:	摘要： The dip of external quantum efficiency (EQE) is observed on In(0.15)Ga(0.85)N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs. 其他題名： Opt Express 出版者： United States 出版日期： 2014-12-15 出處： Optics express, 2014-12, Vol.22 (S7), p.A1753 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.22.0A1753 識別號： PMID: 25607489
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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