摘要： Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers. 其他題名： Materials (Basel) 出版者： Switzerland: MDPI AG 出版日期： 2013-11-22 出處： Materials, 2013-11, Vol.6 (11), p.5440-5446 資源來源： Publicly Available Content Database 版權： Copyright MDPI AG 2013 版權： 2013 by the authors. 2013 識別號： ISSN: 1996-1944 識別號： EISSN: 1996-1944 識別號： DOI: 10.3390/ma6115440 識別號： PMID: 28788400
