摘要： We present an effective light extraction scheme for GaN-based multi-quantum-well (MQW) light emitting diodes with periodic SiO2 nano-honeycomb arrays fabricated by natural lithography and reactive ion etching. The nano-honeycombs significantly boost light output by providing additional light extraction channels, not only guiding the internal modes into air but also alleviating the sever droop effect at high input power. At the driving current of 400mA, light output power through the nano-honeycombs is 77.8% higher than that of the bare device. In addition, the output power is particularly enhanced at the diffraction angle around 65°, which is attributed to the intensive first order diffraction on the honeycombs. Simulations based on finite-difference time-domain method are also carried out to reveal the field distribution across device interfaces. [Display omitted] •GaN-based multi-quantum-well light emitting diodes with periodic SiO2 nano-honeycomb arrays.•Light output power through the nano-honeycombs is 77.8% enhancement.•SiO2 nano-honeycomb photon-management. 出版者： Elsevier Ltd 出版日期： 2014-09-01 出處： Nano energy, 2014-09, Vol.8, p.78-83 版權： 2014 Elsevier Ltd 識別號： ISSN: 2211-2855 識別號： DOI: 10.1016/j.nanoen.2014.05.006
