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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103370


    Title: Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO2 nanorods for GaN-based light-emitting diodes
    Authors: 孫慶成;Ho, Cheng-Han;Hsiao, Yu-Hsuan;Lien, Der-Hsien;Tsai, M. S.;Chang, Don;Lai, Kun-Yu;Sun, Ching-Cherng;He, Jr-Hau
    Contributors: 理學院光電科學與工程學系
    Keywords: Finite difference method;Gallium nitrides;Illumination;Light-emitting diodes;Mathematical analysis;Nanorods;Reflection;Silicon dioxide
    Date: 2013-10-14
    Issue Date: 2026-04-23 11:29:10 (UTC+8)
    Abstract: 摘要: We report an efficient light-extraction scheme employing the hierarchical structure, p-GaN microdomes/SiO2 nanorods (NRs), on GaN light-emitting diodes (LEDs). Compared with the flat LED, the LEDs with hierarchical surfaces exhibits a light-output improvement of 36.8%. The considerable enhancement in light-extraction efficiency is attributed to the multiple tilted surfaces of microdomes and the graded refractive indexes provided by the SiO2 NRs, reducing total internal reflection and Fresnel reflection. The enhanced optical performances are supported by the finite-difference time-domain analysis. Advances in light extraction scheme employing hierarchical structures demonstrated here pave the way to solid-state lighting technology.
    出版日期: 2013-10-14
    出處: Applied physics letters, 2013-10, Vol.103 (16)
    資源來源: AIP Journals (American Institute of Physics)
    識別號: ISSN: 0003-6951
    識別號: EISSN: 1077-3118
    識別號: DOI: 10.1063/1.4824848
    Appears in Collections:[Department of Optics and Photonics] journal & Dissertation

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