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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/103370


    題名: Enhanced light-extraction from hierarchical surfaces consisting of p-GaN microdomes and SiO2 nanorods for GaN-based light-emitting diodes
    作者: 孫慶成;Ho, Cheng-Han;Hsiao, Yu-Hsuan;Lien, Der-Hsien;Tsai, M. S.;Chang, Don;Lai, Kun-Yu;Sun, Ching-Cherng;He, Jr-Hau
    貢獻者: 理學院光電科學與工程學系
    關鍵詞: Finite difference method;Gallium nitrides;Illumination;Light-emitting diodes;Mathematical analysis;Nanorods;Reflection;Silicon dioxide
    日期: 2013-10-14
    上傳時間: 2026-04-23 11:29:10 (UTC+8)
    摘要: 摘要: We report an efficient light-extraction scheme employing the hierarchical structure, p-GaN microdomes/SiO2 nanorods (NRs), on GaN light-emitting diodes (LEDs). Compared with the flat LED, the LEDs with hierarchical surfaces exhibits a light-output improvement of 36.8%. The considerable enhancement in light-extraction efficiency is attributed to the multiple tilted surfaces of microdomes and the graded refractive indexes provided by the SiO2 NRs, reducing total internal reflection and Fresnel reflection. The enhanced optical performances are supported by the finite-difference time-domain analysis. Advances in light extraction scheme employing hierarchical structures demonstrated here pave the way to solid-state lighting technology.
    出版日期: 2013-10-14
    出處: Applied physics letters, 2013-10, Vol.103 (16)
    資源來源: AIP Journals (American Institute of Physics)
    識別號: ISSN: 0003-6951
    識別號: EISSN: 1077-3118
    識別號: DOI: 10.1063/1.4824848
    顯示於類別:[光電科學與工程學系] 期刊論文

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