摘要： ► An abnormal strain enhancement was observed in the initial stage of annealing. ► Almost complete strain relaxation was found below β-SiC precipitation threshold. ► The strain transition can be explained by Ci re-incorporation and P deactivation. ► Si1−yCy could reach a maximal strain value if thermal budget is well controlled. The carbon-incorporation behavior in phosphorous-doped Si1−yCy/Si (y1∼0.018, y2∼0.024) epilayers grown by reduced pressure chemical vapor deposition (RPCVD) has been investigated as a function of annealing temperatures. An abnormal interstitial carbon (Ci) re-incorporation was observed in the initial stage of thermal annealing, introducing an additional tensile strain into the Si1−yCy epilayers. At higher temperature but below β-SiC precipitation threshold, almost complete strain relaxation was found. These strain transitions can be attributed to the competitive behavior between Ci re-incorporation and phosphorus deactivation to kick out the substitutional carbon (Csub) atoms during the post-annealing process. This work demonstrated that Si1−yCy epilayers grown by RPCVD could keep both enhanced carbon incorporation and nonequilibrium phosphorus activation if the thermal budget is well controlled. 出版者： Kidlington: Elsevier B.V 出版日期： 2013-03-15 出處： Journal of alloys and compounds, 2013-03, Vol.553, p.30-34 版權： 2012 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0925-8388 識別號： EISSN: 1873-4669 識別號： DOI: 10.1016/j.jallcom.2012.10.158
