Institute of Electrical and Electronics Engineers Inc.;New York, NY: IEEE
摘要:
摘要： We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices. 其他題名： TNANO 出版者： New York, NY: IEEE 出版日期： 2012-07-01 出處： IEEE transactions on nanotechnology, 2012-07, Vol.11 (4), p.657-660 資源來源： IEEE Electronic Library (IEL) 版權： 2015 INIST-CNRS 識別號： ISSN: 1536-125X 識別號： EISSN: 1941-0085 識別號： DOI: 10.1109/TNANO.2012.2202124 識別號： CODEN: ITNECU
