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    题名: Fabrication of patterned sapphire substrate and effect of light emission pattern on package efficiency
    作者: 孫慶成;Li, Xu-Fong;Huang, Shih-Wei;Lin, Hong-Yu;Lu, Chun-Yan;Yang, Shang-Fu;Sun, Ching-Cherng;Liu, Cheng-Yi
    贡献者: 理學院光電科學與工程學系
    关键词: Chips;Extraction;Gallium nitrides;Light emission;Lithography;Packages;Sapphire;Silicones
    日期: 2015-01-01
    上传时间: 2026-04-23 11:29:58 (UTC+8)
    出版者: The Optical Society
    摘要: 摘要: Pyramidal nature PSS (n-PSS) substrates were produced by a simple wet etching process without standard lithography and dry-etching processes. We found that the output power of the LED on the pyramidal n-PSS substrates is larger than the output power of the LED chip on the flat c-plane sapphire substrate by 46.4% to 51.5%. LED chip on the n-PSS(III) substrate with 73% pattern coverage has the highest output power among LED chips on all n-PSS substrates. The light emission patterns of LED bare chips on different n-PSS and r-PSS substrates were studied. The shape of the light emission pattern was qualitatively defined by the broadness angle, which is the angle at the maximum intensity of the light emission pattern away from the normal direction. The broadness angle is inversely proportional to the facet angle of pyramids created on the n-PSS substrates. In addition, we found that the light extraction efficiency at the GaN/silicone interface has a dependence on the light emission pattern of the bare chips on different n-PSS substrates. The broader light emission pattern (larger broadness angle) would result in higher light extraction efficiency at the GaN/silicone interface.
    出版日期: 2015-08-01
    出處: Optical materials express, 2015-08, Vol.5 (8), p.1784-1791
    資源來源: Optica Publishing Group Journals
    識別號: ISSN: 2159-3930
    識別號: EISSN: 2159-3930
    識別號: DOI: 10.1364/OME.5.001784
    显示于类别:[光電科學與工程學系] 期刊論文

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