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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103434


    Title: Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection
    Authors: 李勝偉;Kuo, Ming-Hao;Lai, Wei-Ting;Lee, Sheng-Wei;Chen, Yen-Chun;Chang, Chia-Wei;Chang, Wen-Hao;Hsu, Tzu-Min;Li, Pei-Wen
    Contributors: 工學院材料科學與工程研究所
    Keywords: Crystal structure;Germanium;Heterostructures;Optical interconnects;Quantum dots;Self assembly;Silicon;Thin films
    Date: 2015-01-01
    Issue Date: 2026-04-23 11:30:25 (UTC+8)
    Publisher: The Optical Society;United States
    Abstract: 摘要: We demonstrate an effective approach to grow high-quality thin film (>1 μm) of multifold Ge/Si/Ge composite quantum dots (CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.68 pA/μm2, superior photoresponsivity of 267 and 220 mA/W under 850 and 980 nm illumination, respectively, and very fast temporal response time of 0.24 ns measured on the Ge/Si CQD photodetectors.
    其他題名: Opt Lett
    出版者: United States
    出版日期: 2015-05-15
    出處: Optics letters, 2015-05, Vol.40 (10), p.2401-2404
    資源來源: Optica Publishing Group Journals
    識別號: ISSN: 0146-9592
    識別號: ISSN: 1539-4794
    識別號: EISSN: 1539-4794
    識別號: DOI: 10.1364/OL.40.002401
    識別號: PMID: 26393750
    Appears in Collections:[Institute of Materials Science and Engineering] journal & Dissertation

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