Designer Ge/Si composite quantum dots with enhanced thermoelectric properties

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题名:	Designer Ge/Si composite quantum dots with enhanced thermoelectric properties
作者:	李勝偉;Chang, Hung-Tai;Wang, Sih-Yuan;Lee, Sheng-Wei
贡献者:	工學院材料科學與工程研究所
日期:	2014-04-07
上传时间:	2026-04-23 11:30:29 (UTC+8)
出版者:	Royal Society of Chemistry
摘要:	摘要： An otherwise random, self-assembly of Ge/Si composite quantum dots (CQDs) on Si was controlled by inserting a layer of Si, sub-dot stacks, and post-annealing to produce micron-scale-thick QD layers with desired QD morphology, interface density, and composition distribution. A heterostructure consisting of a deliberate insertion of Si between Ge sub-dots is shown to improve the epitaxial coherence of the Ge QDs by suppression of the Ge surface interdiffusion and coarsening. As compared to regular-QD materials, the thin-film-like multifold-CQD materials are found to exhibit both reduced cross-plane thermal conductivity and enhanced electrical conductivity, and 1.5 times higher ZT value by calculation, providing a promising building block for practical thermoelectric applications in micro- or nanoelectronics. Designer multifold-CQD materials exhibit both reduced thermal conductivity and enhanced electrical conductivity, and higher ZT by calculation. 出版日期： 2014-03-13 識別號： ISSN: 2040-3364 識別號： EISSN: 2040-3372 識別號： DOI: 10.1039/c3nr06335f
显示于类别:	[材料科學與工程研究所 ] 期刊論文

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