摘要： Thin films of mix-phase AgIn sub(5)S sub(8)/AgInS sub(2) (AIS) were deposited on Sn-doped In sub(2)O sub(3) glass substrates via chemical bath deposition. Effect of dipping cycle (1 to 4) on structural, optical and photoelectrochemical (PEC) characteristics of AIS films were investigated. The as-obtained samples after annealing in vacuum were analyzed by X-ray diffraction (XRD), scanning electron microscopy, alpha -step, UV-visible spectra and electrochemical analysis. After annealing, the result of XRD indicated that all samples revealed mix-phase of AgIn sub(5)S sub(8)/AgInS sub(2) structure. Thickness of annealed AIS thin films were in the range from 0.59 to 2.04 mu m analyzed by alpha -step instrument. From PEC performance results, we found that the AIS film with dipping 3 cycles had better photocurrent density of 2.95 mA/cm super(2) at 1.0 V under 300 W Xe lamp illumination with the intensity of 100 mW/cm super(2). This value was about 2 times higher than dipping 4 cycles AIS film. Observed higher photocurrent was likely due to a suitable thickness and higher carrier concentration. 出版日期： 2015-04-01 出處： Nanoscience and nanotechnology letters, 2015-04, Vol.7 (4), p.297-301 識別號： ISSN: 1941-4900 識別號： DOI: 10.1166/nnl.2015.1915
