Effect of direct current power to Ti-target on the composition, structure and characterization of the Ti (0-2.36 at. %), Al codoped ZnO sputtering thin films

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題名:	Effect of direct current power to Ti-target on the composition, structure and characterization of the Ti (0-2.36 at. %), Al codoped ZnO sputtering thin films
作者:	林景崎;Lin, Jing-Chie;Wu, Jing-Nan;Tseng, Chun-An;Peng, Kun-Cheng
貢獻者:	工學院材料科學與工程研究所
關鍵詞:	Aluminum;Direct current;Electric power generation;Glass;Sputtering;Thin films;Titanium;X-rays;Zinc oxide
日期:	2013-01-01
上傳時間:	2026-04-23 11:31:38 (UTC+8)
出版者:	Japan Society of Applied Physics;The Japan Society of Applied Physics
摘要:	摘要： Transparent conductive Ti, Al codoped ZnO (TAZO) films were prepared on glass substrate by three-target magnetron sputtering system in this work. The glass substrate was heated to 200 °C, and the working pressure in the chamber was at $5\times 10^{-2}$ Torr. In the process of sputtering, pure Ti target was bombarded by direct current varying in the power at 0, 20, 30, and 40 W; however, the pure Al target and pure ZnO target were bombarded by radio frequency power fixed at 100 W. After sputtering for 150 min, the thickness of the films was measured to be about 700 nm varying in Ti-content. The surface morphology and cross section of the films were examined by using field emission scanning electron microscope (FE-SEM) and their composition was analyzed with attached energy dispersive spectroscopy (EDS). The Ti-content of the films was found to increase with increasing the DC power in the order: 0 at. % (0 W) $<$ 0.59 at. % (20 W) $<$ 1.35 at. % (30 W) $<$ 2.36 at. % (40 W). Analysis of X-ray diffraction (XRD) indicated that all the films belong to wurtzite structure textured on (0002). Through examination by atomic force microscopy (AFM), the films revealed their average surface roughness ($R_{\text{a}}$) decreased from 10.74 to 5.40 nm with increasing the Ti-content. Surface composition and depth profile of the films were examined by X-ray photoelectron spectroscopy (XPS). The electrical resistivity of the films, determined by four-point probe, was in the range from $0.93\times 10^{-3}$ $\Omega$ cm (with 0.59 at. % Ti) to $8.34\times 10^{-3}$ $\Omega$ cm (with 2.36 at. % Ti). The average optical transmittance of the films analyzed by UV--vis light was higher than 85% in visible spectra. 出版者： The Japan Society of Applied Physics 出版日期： 2013-01-01 出處： Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AC06-01AC06-6 資源來源： Institute of Physics Journals 識別號： ISSN: 0021-4922 識別號： EISSN: 1347-4065 識別號： DOI: 10.7567/JJAP.52.01AC06
顯示於類別:	[材料科學與工程研究所 ] 期刊論文

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