在這篇論文中，我們使用等效電路法(equivalent circuit approach)來研究開發二維異質接面模型之建立。所謂等效電路法就是將半導體元件的柏松方程式、電子連續方程式以及電洞連續方程式轉換成等效電路。我們 先從1D pN 異質接面(hetero-junction)開始研究，建立1D pN異質接面等效電路模型，然後我們參考1D pN異質接面等效電路來建立2D 異質接面雙載子電晶體(HBT)等效電路模型。並且，我們也利用我們開發出來的模型從本質濃度的觀點來探討BJT與HBT的差異性。 In this thesis, we use the equivalent circuit approach to study 2D heterojunction modeling. Poisson’s equation and continuity equation for electron and hole are formulated into a sub-circuit format suitable for general circuit simulator in the equivalent circuit approach. We start to investigate in the one-dimensional pN hetero-junction and we built one-dimensional pN hetero-junction equivalent circuit model. Then, we refer one-dimensional pN hetero-junction equivalent circuit model to built two-dimensional HBT equivalent circuit model. Furthermore, we use the concept of intrinsic carrier concentration to discuss the difference of HBT and BJT.
