Electrochemical Society, Inc.;The Electrochemical Society
摘要:
摘要： This study shows the excellent heat resistance of hydrogen doped ZnO:Ga (GZO) films successfully fabricated by stacking a GZO protection film. The poor heat resistance of hydrogen doped GZO films caused by the departure of hydrogen from films after the RTA treatment exceeded 400°C results in an increase in the resistivity. It means they are not suitable for thin film practical application processing with elevated temperatures. The electrical properties can be seen that the resistivity and carrier concentration of the GZO/GZO:H films remains nearly stable up to the annealing temperature of 600°C, and they maintain low resistivity below 5.6 × 10−4 Ω-cm. 其他題名： Electrochem. Solid-State Lett 出版者： The Electrochemical Society 出版日期： 2012-01 出處： Electrochemical and solid-state letters, 2012-01, Vol.15 (4), p.H94-H96 版權： 2012 ECS - The Electrochemical Society 識別號： ISSN: 1099-0062 識別號： ISSN: 1944-8775 識別號： EISSN: 1944-8775 識別號： DOI: 10.1149/2.021204esl
