Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1-x nanomesh

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Title:	Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1-x nanomesh
Authors:	李勝偉;Nie, Tianxiao;Tang, Jianshi;Kou, Xufeng;Gen, Yin;Lee, Shengwei;Zhu, Xiaodan;He, Qinglin;Chang, Li-Te;Murata, Koichi;Fan, Yabin;Wang, Kang L.
Contributors:	工學院材料科學與工程研究所
Keywords:	142/126;639/301/119/1001;639/766/119/2793;639/925/357/997;639/925/927/1062;CMOS;Electrons;Engineering;Humanities and Social Sciences;Intermetallic compounds;Magnetism;Microscopy;Molecular beam epitaxy;multidisciplinary;Plasma etching;Quantum dots;Science;Science (multidisciplinary);Transistors
Date:	2016-10-20
Issue Date:	2026-04-23 11:34:07 (UTC+8)
Publisher:	Nature Publishing Group;London: Springer Science and Business Media LLC
Abstract:	摘要： AbstractVoltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing solution to significantly reduce the power dissipation and variability beyond current CMOS technology. However, it has been proven to be very challenging to achieve a candidate with high Curie temperature (Tc), controllable ferromagnetism and easy integration with current Si technology. Here we report the effective electric-field control of both ferromagnetism and magnetoresistance in unique MnxGe1−xnanomeshes fabricated by nanosphere lithography, in which aTcabove 400 K is demonstrated as a result of size/quantum confinement. Furthermore, by adjusting Mn doping concentration, extremely giant magnetoresistance is realized from ∼8,000% at 30 K to 75% at 300 K at 4 T, which arises from a geometrically enhanced magnetoresistance effect of the unique mesh structure. Our results may provide a paradigm for fundamentally understanding the highTcin ferromagnetic semiconductor nanostructure and realizing electric-field control of magnetoresistance for future spintronic applications. 其他題名： Nat Commun 出版者： London: Springer Science and Business Media LLC 出版日期： 2016-10-20 出處： Nature Communications, 2016-10, Vol.7 (1), p.12866--9, Article 12866 資源來源： Nature 版權： The Author(s) 2016 版權： Copyright Nature Publishing Group Oct 2016 版權： Copyright © 2016, The Author(s) 2016 The Author(s) 識別號： ISSN: 2041-1723 識別號： EISSN: 2041-1723 識別號： DOI: 10.1038/ncomms12866 識別號： PMID: 27762320
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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