Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

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题名:	Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED
作者:	鍾德元;Lin, Yi Chin;Liu, Wei Chih;Chang, Chia Lun;Chung, Chao Chi;Chen, Yan Hao;Chung, Te Yuan;Liu, Cheng Yi
贡献者:	理學院光電科學與工程學系
关键词:	Compressive properties;Compressive stress;Energy states;Eutectics;Gallium nitride;Light emitting diodes;Piezoelectricity;Quantum efficiency;Quantum wells;Reduction;Silicon;Stresses;Substrates
日期:	2014-09-15
上传时间:	2026-04-23 11:34:21 (UTC+8)
出版者:	Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
摘要:	摘要： By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm 2 . The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment. 其他題名： LPT 出版者： New York: IEEE 出版日期： 2014-09-15 出處： IEEE photonics technology letters, 2014-09, Vol.26 (18), p.1793-1796 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2014 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2014.2329857 識別號： CODEN: IPTLEL
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