Fabrication of si heterojunction solar cells using pdoped sinanocrystals embedded in SiNx films as emitters

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Title:	Fabrication of si heterojunction solar cells using pdoped sinanocrystals embedded in SiNx films as emitters
Authors:	陳一塵;Wu, Ping-Jung;Wang, Yu-Cian;Chen, I-Chen
Contributors:	工學院材料科學與工程研究所
Keywords:	Chemistry and Materials Science;Materials Science;Molecular Medicine;Nano Express;Nanochemistry;Nanoscale Science and Technology;Nanotechnology;Nanotechnology and Microengineering
Date:	2013-01-01
Issue Date:	2026-04-23 11:34:59 (UTC+8)
Publisher:	Springer New York;New York: Springer New York
Abstract:	摘要： Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiN x (Si-NCs/SiN x ) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron cyclotron resonance chemical vapor deposition. We investigate the influence of the N/Si ratio in the Si-NCs/SiN x films on their electrical and optical properties, as well as the photovoltaic properties of the fabricated heterojunction devices. Increasing the nitrogen content enhances the optical gap E 04 while deteriorating the electrical conductivity of the Si-NCs/SiN x film, leading to an increased short-circuit current density and a decreased fill factor of the heterojunction device. These trends could be interpreted by a bi-phase model which describes the Si-NCs/SiN x film as a mixture of a high-transparency SiN x phase and a low-resistivity Si-NC phase. A preliminary efficiency of 8.6% is achieved for the Si-NCs/sc-Si heterojunction solar cell. 其他題名： Nanoscale Res Lett 出版者： New York: Springer New York 出版日期： 2013-11-05 出處： Nanoscale research letters, 2013-11, Vol.8 (1), p.457-457 資源來源： Publicly available content database 版權： Wu et al.; licensee Springer. 2013. This article is published under license to BioMed Central Ltd. This is an open access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 版權： Copyright © 2013 Wu et al.; licensee Springer. 2013 Wu et al.; licensee Springer. 識別號： ISSN: 1931-7573 識別號： EISSN: 1556-276X 識別號： DOI: 10.1186/1556-276X-8-457 識別號： PMID: 24188725
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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