Hybrid YAG/CdSe quantum dots phosphors for white light-emitting diodes

NCUIR > Engineering College > Institute of Materials Science and Engineering > journal & Dissertation > Item 987654321/103717

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103717

Title:	Hybrid YAG/CdSe quantum dots phosphors for white light-emitting diodes
Authors:	王冠文;Chung, Shu-Ru;Wang, Kuan-Wen;Wang, Ming-Wei
Contributors:	工學院材料科學與工程研究所
Keywords:	Cadmium selenides;Devices;Emission;Intermetallics;Nanostructure;Phosphors;Quantum dots;Wavelengths;YAG
Date:	2013-06-01
Issue Date:	2026-04-23 11:36:06 (UTC+8)
Publisher:	American Scientific Publishers;26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers
Abstract:	摘要： CdSe quantum dots (QDs) with the emission wavelength of 577 nm, full width at half maximum (FWHM) of 28 nm, quantum yield (QY) of 40% and average particle size of 3.7±0.5 nm are prepared. 1, 3 and 5 wt% of CdSe QDs is blended with commercial YAG:Ce phosphor (called as composite phosphor) and the device performance of YAG-based and composite phosphor-based white light-emitting diode (WLED) is investigated. The color rendering index (CRI) and luminous efficiency could be improved simultaneous for composite phosphor-based WLED. As the applied current increases, the correlated color temperature (CCT), Commission International d'Eclairage (CIE) chromaticity coordinates and CRI of both WLEDs are almost the same when compared with standard condition (20 mA), while the luminous efficiency of both WLEDs decreases with increasing applied current. It is interesting to find that there is a positive effect of QDs on the luminous efficiency and CRI value. This result also reveals that adding a small amount of yellow emitting QDs can not only reduce the scattering of light effectively but increase utilization efficiency of reflection and refraction light, thereby enhancing the efficiency of composite phosphor-based WLED. Moreover, the emission wavelength of 577 nm QDs is longer than that of YAG, it redound to extends emission range resulting in increase the CRI of devices. 其他題名： J Nanosci Nanotechnol 出版者： 26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers 出版日期： 2013-06-01 出處： Journal of nanoscience and nanotechnology, 2013-06, Vol.13 (6), p.4358-4363 識別號： ISSN: 1533-4880 識別號： DOI: 10.1166/jnn.2013.7209 識別號： PMID: 23862503
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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