Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103727

Title:	Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method
Authors:	李勝偉;Lin, Tzu Wei;Chang, Yu-Wei;Peng, Cheng-Hsiung;Chen, Pang Shiu;Lee, S. W.
Contributors:	工學院材料科學與工程研究所
Keywords:	Glass substrates;Indium;Influence;Plasma;Science;Taguchi methods;Temperature;Zinc oxides
Date:	2016-01-01
Issue Date:	2026-04-23 11:36:18 (UTC+8)
Publisher:	Hindawi Publishing Corporation;Cairo, Egypt: Hindawi Publishing Corporation
Abstract:	摘要： ZnO/Ag/ZnO (ZAZ) and ZnO/Cu/ZnO (ZCZ) were prepared. The dependence of crystalline, electrical, and optical properties for the multilayer on the postdeposition annealing (PDA) was studied. After PDA of 300°C for 20 min, the diffusion of Cu in ZnO occurs; this result is responsible for the increasing resistance of the annealed ZCZ. Ag with a thickness of 10 nm was deposited upon ZnO. The interface of ZnO and Ag is clearly revealed by high resolution transmission electron microscopy. The crystalline of ZnO and Ag films in the ZAZ with a sheet resistance ( R s ) down to 4.17 Ω/sq. The ZAZ layer shows a better thermal stability (up to 400°C) than that of the ZCZ ones. The PDA degraded slightly the optical transmittance and increases the conductivity of ZAZ layer. The figure of merit (FOM) is applied to analysis of the ZAZ layer. The PDA can enhance the FOM of the ZAZ with Ag thickness >8 nm. The resulting R s and the transmittance ZAZ layers were analyzed by the Taguchi method to obtain the appropriate parameters. The optimized ZAZ has been verified with a R s of 2.3 Ω/sq, a high transmittance (71%), and the optimal FOM of 1.41 × 10−2 Ω−1. 出版者： Cairo, Egypt: Hindawi Publishing Corporation 出版日期： 2016-01-01 出處： Advances in materials science and engineering, 2016-01, Vol.2016 (2016), p.1-12 資源來源： Directory of Open Access Journals - DOAJ (NTUSG) 版權： Copyright © 2016 Pang Shiu Chen et al. 版權： Copyright © 2016 Pang Shiu Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 識別號： ISSN: 1687-8434 識別號： ISSN: 1687-8442 識別號： EISSN: 1687-8442 識別號： DOI: 10.1155/2016/7258687
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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