摘要： ► We report a new Ag-based p-type GaN contact with La additive. ► A high reflectance and low contact resistivity were obtained from Ag–La contacts. ► The Ag–La contact shows better thermal stability than the Ag contact. ► The addition of La could effectively suppress the Ag agglomeration during annealing. We investigated the effect of La additive on the improvement of light reflectance and thermal stability of Ag contacts on p-GaN. A high reflectance of over 90% at 460nm wavelength and low specific contact resistivity of 5.5×10−5Ωcm2 were obtained from La-containing Ag contacts annealed at 300°C for 1min, which also show better thermal stability than Ag contacts after annealing in air ambient. The experimental results reveal that the addition of La could effectively slow down Ag migration in 〈111〉 direction during annealing, and thus suppress the Ag agglomeration at elevated temperature, leading to a good ohmic contact with improved high reflectance and thermal stability. 出版者： Elsevier Ltd 出版日期： 2013-05-01 出處： Superlattices and microstructures, 2013-05, Vol.57, p.51-57 版權： 2013 Elsevier Ltd 識別號： ISSN: 0749-6036 識別號： EISSN: 1096-3677 識別號： DOI: 10.1016/j.spmi.2013.02.002
