Indium-free transparent TiOx/Ag/WO3 stacked composite electrode with improved moisture resistance

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103737

Title:	Indium-free transparent TiOx/Ag/WO3 stacked composite electrode with improved moisture resistance
Authors:	李勝偉;Peng, Cheng-Hsiung;Chen, Pang Shiu;Lo, Jei Wen;Lin, Tzu Wei;Lee, S. W.
Contributors:	工學院材料科學與工程研究所
Keywords:	Characterization and Evaluation of Materials;Chemistry and Materials Science;Materials Science;Optical and Electronic Materials
Date:	2016-11-01
Issue Date:	2026-04-23 11:36:29 (UTC+8)
Publisher:	Springer New York;New York: Springer US
Abstract:	摘要： Amorphous TiO x , WO 3 and Ag mid-layer films were deposited on polyethersulfone (PES) and soda-lime glass via electron beam evaporation at room temperature. The crystallinity, microstructure and surface morphology of asymmetric TiO x /Ag/WO 3 multilayers (TAW) and symmetric WO 3 /Ag/WO 3 (WAW) multilayers were investigated. The polygrains oriented along the (111) planes in the inserted Ag thin films were adopted to supply carriers into both of the dielectric layers and reduce the sheet resistance of the multilayer. The TAW multilayer with a sufficiently large Ag thickness (>15 nm) exhibited low resistance, and highly visible transmittance, low infra-red transmittance, to serve as a transparent conductive electrode and a good heat mirror. The dependence of the Ag and TiO x thickness on the optical and electrical properties of TAW multilayers was also explored. A figure of merit (FOM) was used to find an optimal layer structure for a TAW multilayer with superior conductivity and highly visible transparency. A high FOM of 1.2 × 10 −1 (Ω −1 ) was achieved at the visible wavelength of 550 nm for a asymmetric TAW stacked layer on PES with a 15-nm-thick Ag layer, a 40-nm-thick TiO x and a 40 nm-thick WO 3 layer. The moisture resistances of the TAW stacking layer showed more robustness than that of the WAW sample after damp heat exposure. 其他題名： J Mater Sci: Mater Electron 出版者： New York: Springer US 出版日期： 2016-11-01 出處： Journal of materials science. Materials in electronics, 2016-11, Vol.27 (11), p.12060-12066 資源來源： EBSCOhost OmniFile Full Text Select 版權： Springer Science+Business Media New York 2016 識別號： ISSN: 0957-4522 識別號： EISSN: 1573-482X 識別號： DOI: 10.1007/s10854-016-5354-z
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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