摘要： •CuSCN films were synthesized by electrochemical process.•The parameter of CuSCN films was annealing temperature.•The photoelectrochemical characteristics of CuSCN films were investigated. Thin films of p-type β-CuSCN were deposited on indium–tin oxide glass substrates via electrochemical process. Various annealing temperatures (200, 300 and 400°C) were taken into consideration. The influence of annealing temperature on structural, optical, electrical and photoelectrochemical characteristics of β-CuSCN thin films were investigated. Results from X-ray diffraction indicated as-obtained β-CuSCN thin film was in a hexagonal close pack crystal structure. We found that the crystallographic orientation changed and the optical energy band gap slightly increased with increasing annealing temperatures. These properties made CuSCN films annealed at 400°C a better photoelectrochemical performance with photocurrent density of about −0.39mA/cm2 at −0.5V vs. SCE. This value is about 5 times higher than the as-deposited CuSCN film. Observed higher photocurrent density is likely due to the intrinsic of a higher charge carrier concentration, and a lower resistance within CuSCN crystal and at CuSCN/electrolyte interface. 出版者： Elsevier B.V 出版日期： 2015-02-15 出處： Journal of alloys and compounds, 2015-02, Vol.622, p.669-675 版權： 2014 Elsevier B.V. 識別號： ISSN: 0925-8388 識別號： EISSN: 1873-4669 識別號： DOI: 10.1016/j.jallcom.2014.10.147
