Influence of dipping cycle on structural, optical and photoelectrochemical characteristics of single phase polycrystalline AgInS2 thin films on ITO prepared by aqueous chemical reaction

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題名:	Influence of dipping cycle on structural, optical and photoelectrochemical characteristics of single phase polycrystalline AgInS2 thin films on ITO prepared by aqueous chemical reaction
作者:	林景崎;Huang, Mao-Chia;Wang, TsingHai;Chang, Wen-Sheng;Wu, Ching-Chen;Lin, Jing-Chie;Yen, Tzu-Hsiang
貢獻者:	工學院材料科學與工程研究所
關鍵詞:	AgInS2;CBD;Chemical bath deposition;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Cross-disciplinary physics: materials science;rheology;Electrical properties of specific thin films;Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures;Exact sciences and technology;Liquid phase epitaxy;deposition from liquid phases (melts, solutions, and surface layers on liquids);Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation;Optical properties of specific thin films;Photoelectrochemistry;Physics;Water splitting
日期:	2014-09-05
上傳時間:	2026-04-23 11:36:47 (UTC+8)
出版者:	Elsevier BV;Kidlington: Elsevier B.V
摘要:	摘要： •Single phase AgInS2 films prepared via chemical bath deposition.•The parameters of AgInS2 films was dipping cycle.•The dipping 3 cycles AgInS2 film had the highest photocurrent density of 3.50mA/cm2. Thin films of polycrystalline AgInS2 were deposited on indium–tin oxide glass substrates by chemical bath deposition process. Various dipping cycles (1, 2, 3, 4 and 5) were taken into consideration. The influence of dipping cycle on structural, optical, electrical and photoelectrochemical characteristics of the AgInS2 thin films were investigated. The X-ray diffraction patterns indicated that all the samples revealed single phase of orthorhombic AgInS2 with polycrystalline structure. The thickness of samples in a range of 0.82–2.67μm analyzed by α-step instrument. The optical band gap of all AgInS2 films were 1.94eV calculated by transmittance spectra, respectively. All the samples revealed n-type semiconductor behaviors by Hall measurement. The carrier concentrations, mobility and resistivity of the AgInS2 films at room temperature were in the range of 1012–1015cm−3, 1.9–15cm2V−1s−1 and 103–105Ωcm, respectively. We found that the dipping 3 cycles AgInS2 film had a better photoelectrochemical performance with photocurrent density of 3.50mA/cm2 bias 0.5V vs. SCE reference electrode under a 300W Xe lamp illumination with the intensity of 100mW/cm2. This value was about 3 times higher than the dipping 5 cycles AgInS2 film. Observed higher photocurrent density was likely due to a suitable thickness, higher carrier mobility and lower charge transfer resistance. 出版者： Kidlington: Elsevier B.V 出版日期： 2014-09-05 出處： Journal of alloys and compounds, 2014-09, Vol.606, p.189-195 版權： 2014 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0925-8388 識別號： EISSN: 1873-4669 識別號： DOI: 10.1016/j.jallcom.2014.04.001
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