Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films

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Title:	Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films
Authors:	陳一塵;Ke, Wen-Cheng;Jian, Sheng-Rui;Chen, I-Chen;Jang, Jason S.-C.;Chen, Wei-Kuo;Juang, Jenh-Yih
Contributors:	工學院材料科學與工程研究所
Keywords:	CVD;Hall effect;Nanoindentation;Thin films
Date:	2012-10-15
Issue Date:	2026-04-23 11:36:58 (UTC+8)
Publisher:	Elsevier BV;Elsevier B.V
Abstract:	摘要： The effects of Mg-containing precursor flow rate on the characteristics of the Mg-doped GaN (GaN:Mg) were systematically studied in this study. The GaN:Mg films were deposited on sapphire substrates by metal-organic chemical-vapor deposition (MOCVD) with various flow rates of 25, 50, 75 and 100 sccm of bis-(cyclopentadienyl)-magnesium (Cp2Mg) precursor. The structural, electrical and nanomechanical properties of GaN:Mg thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall measurement and nanoindentation techniques, respectively. Results indicated that GaN:Mg films obtained with 25 sccm Cp2Mg possess the highest hole concentration of 3.1 × 1017 cm−3. Moreover, the hardness and Young's modulus of GaN:Mg films measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option showed positive dependence with increasing flow rate of Cp2Mg precursor, presumably due to the solution hardening effect of Mg-doping. Fig. (a) shows the SIMS depth profile analyses revealing the actual Mg atomic concentration in GaN:Mg thin films grown by the present low pressure growth technique. It is evident that the Mg concentration remains rather uniform throughout the entire thickness of GaN:Mg thin film. Fig. (b) displays the SIMS analysis of H concentration in GaN:Mg thin films. It can be observed that the H concentration is slightly increased with increasing Mg flow rate. The results indicate that there is intimate correlations between the increased hole concentration and the decreased H concentration in GaN:Mg thin films. [Display omitted] ► The GaN:Mg thin films are grown by MOCVD. ► Electrical properties of GaN:Mg thin films are measured by Hall measurement. ► Hardness and Young's modulus of GaN:Mg thin films are measured by nanoindentation. 出版者： Elsevier B.V 出版日期： 2012-10-15 出處： Materials Chemistry and Physics, 2012-10, Vol.136 (2-3), p.796-801 版權： 2012 Elsevier B.V. 識別號： ISSN: 0254-0584 識別號： EISSN: 1879-3312 識別號： DOI: 10.1016/j.matchemphys.2012.07.060
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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