Influence of phosphorous doping on silicon nanocrystal formation in silicon-rich silicon nitride films

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Title:	Influence of phosphorous doping on silicon nanocrystal formation in silicon-rich silicon nitride films
Authors:	陳一塵;Wu, P J;Wang, Y C;Chen, I C
Contributors:	工學院材料科學與工程研究所
Keywords:	Annealing;Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.);Cold working, work hardening;annealing, quenching, tempering, recovery, and recrystallization;textures;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Cross-disciplinary physics: materials science;rheology;Crystallization;Deposition;Diamagnetic and cyclotron resonances;Exact sciences and technology;Magnetic resonances and relaxations in condensed matter, m�ssbauer effect;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Nanocrystalline materials;Nanocrystals;Nanoscale materials and structures: fabrication and characterization;Phosphorus;Physics;Silicon;Silicon nitride;Treatment of materials and its effects on microstructure and properties;X-rays
Date:	2013-03-27
Issue Date:	2026-04-23 11:37:06 (UTC+8)
Publisher:	IOP Publishing Ltd.;Bristol: IOP Publishing
Abstract:	摘要： Phosphorus-doped silicon nanocrystals (Si-NCs) embedded in a silicon nitride matrix were fabricated by post-annealing of silicon-rich silicon nitride (SRN) films deposited by electron cyclotron resonance chemical vapour deposition. The effects of phosphorus addition on the Si crystallization behaviour in SRN films were investigated. From the experimental results, the existence of phosphorus enhances phase separation in SRN and thus Si crystallization rate. As the phosphorus content increases, the Si-NC size increases under the same annealing conditions. The x-ray photoelectron spectroscopy P 2p signal attributed to Si-P or P-P bonds indicates that the phosphorus may exist inside Si-NCs. It was also found that the crystallization temperature decreases when phosphorus concentration is increased, and could be as low as 800 °C. 其他題名： JPhysD 其他題名： J. Phys. D: Appl. Phys 出版者： Bristol: IOP Publishing 出版日期： 2013-03-27 出處： Journal of physics. D, Applied physics, 2013-03, Vol.46 (12), p.125104-1-6 資源來源： Institute of Physics Journals 版權： 2013 IOP Publishing Ltd 版權： 2014 INIST-CNRS 識別號： ISSN: 0022-3727 識別號： EISSN: 1361-6463 識別號： DOI: 10.1088/0022-3727/46/12/125104 識別號： CODEN: JPAPBE
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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