Microdome InGaN-based multiple quantum well solar cells

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103764

Title:	Microdome InGaN-based multiple quantum well solar cells
Authors:	賴昆佑;Ho, Cheng-Han;Lai, Kun-Yu;Lin, Chin-An;Lin, Guan-Jhong;Hsing, Meng-Kai;He, Jr-Hau
Contributors:	理學院光電科學與工程學系
Date:	2012-07-09
Issue Date:	2026-04-23 11:37:07 (UTC+8)
Abstract:	摘要： InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102%. The improvements in short-circuit current density (Jsc, from 0.43 to 0.54 mA/cm2) and fill factor (from 44% to 72%) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process. 出版日期： 2012-07-09 出處： Applied physics letters, 2012-07, Vol.101 (2) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4734380
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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