摘要： We investigated the near infrared enhancement in Cu(In,Ga)Se(2) (CIGS)- based solar cells utilizing a hydrogen-doping ZnO (ZnO:H) window layer. The results show that the carrier concentration of ZnO:H film is lower than that of AZO film which can increase the transmittance in the NIR. The advantage of ZnO:H film is higher Hall mobility than AZO film. Thus ZnO:H film has similar resistivity to AZO film. It was found that the cell efficiency was 12.4 and 13% for the AZO device and the ZnO:H device, respectively. The cell efficiency is enhanced by 4.8%. Furthermore, the results indicate that, the ZnO:H film is superior to the AZO film as the window layer for CIGS-based solar cells. 其他題名： Opt Express 出版者： United States 出版日期： 2012-11-05 出處： Optics express, 2012-11, Vol.20 (S6), p.A806 資源來源： Optica Publishing Group Journals 識別號： ISSN: 1094-4087 識別號： EISSN: 1094-4087 識別號： DOI: 10.1364/OE.20.00A806 識別號： PMID: 23187656
