摘要： InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates. [Display omitted] •InGaN/GaN multiple-quantum-well concentrator solar cells were grown on (111) Si substrate.•Conversion efficiency of the device was boosted by 25% when solar energy went from 1-sun to 105-sun.•The efficiency enhancement is less than 5% on sapphire under similar concentration ratios.•The difference was attributed to the superior heat sinking of Si. 出版者： Amsterdam: Elsevier B.V 出版日期： 2013-10-01 出處： Solar energy materials and solar cells, 2013-10, Vol.117, p.54-58 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2013 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0927-0248 識別號： EISSN: 1879-3398 識別號： DOI: 10.1016/j.solmat.2013.05.017
