摘要： Thermal conductivity (k(T)) of Ge quantum dots (QDs) embedded in SiO2 was investigated at T = 100–400 K. The Ge QD/SiO2 system appears to have much lower k(T) than their counterparts of bulk Ge and SiO2, and the reduction factor increases with the surface-to-volume ratio of the QD in SiO2. Attendant to reduced magnitude includes delayed Umklapp decline and weaker dependence on temperature for k(T). Effective medium analysis suggests the reduction in k primarily comes from the decreased group velocity thanks to the QD inclusion that induces interfacial stress on SiO2, phonon confinement, and boundary scatterings. 出版者： AIP Publishing 出版日期： 2012-12-17 出處： Applied Physics Letters, 2012-12, Vol.101 (25) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4773204
