Low temperature (180�C) growth of smooth surface germanium epilayers on silicon substrates using electron cyclotron resonance chemical vapor deposition

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Title:	Low temperature (180�C) growth of smooth surface germanium epilayers on silicon substrates using electron cyclotron resonance chemical vapor deposition
Authors:	陳一塵;Li, Tomi T.;Chang, Jenq-Yang;Lee, Chien-Chieh;Chu, Yen-Ho;Chang, Chiao;Chang, Teng-Hsiang;Chen, I-Chen
Contributors:	工學院材料科學與工程研究所
Keywords:	Chemical vapor deposition;Dielectric films;Electron cyclotron resonance;Epitaxial growth;Germanium;Methods;Photovoltaic cells;Production processes;Silicon;Silicon substrates;Solar energy;Surface roughness;Thermal properties;Thin films;X-rays
Date:	2014-01-01
Issue Date:	2026-04-23 11:38:18 (UTC+8)
Publisher:	Hindawi Publishing Corporation;Cairo, Egypt: Hindawi Publishing Corporation
Abstract:	摘要： This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing. 出版者： Cairo, Egypt: Hindawi Publishing Corporation 出版日期： 2014-01-01 出處： International Journal of Photoenergy, 2014-01, Vol.2014 (2014), p.1-8 資源來源： Directory of Open Access Journals (DOAJ) 版權： Copyright © 2014 Teng-Hsiang Chang et al. 版權： COPYRIGHT 2014 John Wiley & Sons, Inc. 版權： COPYRIGHT 2014 Hindawi Limited 版權： Copyright © 2014 Teng-Hsiang Chang et al. Teng-Hsiang Chang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 識別號： ISSN: 1110-662X 識別號： ISSN: 1687-529X 識別號： EISSN: 1687-529X 識別號： DOI: 10.1155/2014/906037
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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