摘要： •Carbon-doped α-Fe2O3 films were synthesized by sputtering process.•The parameter of C-doped α-Fe2O3 was RF power of graphite target.•The photoelectrochemical characteristics of C-doped α-Fe2O3 films were investigated. Thin films of α-Fe2O3 doped with carbon have been fabricated on F-doped SnO2 glass substrate by magnetron sputtering process via DC power on the pure Fe target (99.99%) combined with RF power on the pure graphite target (99.99%). The influences of RF power (0, 40, 80 and 120W) on optical, structural and photoelectrochemical (PEC) characteristics have been investigated. The as-obtained samples after annealing in Ar ambient were analyzed by scanning electron microscopy, X-ray diffraction (XRD), Raman spectra, UV–visible spectra and electrochemical analysis. After annealing, all samples revealed only hematite characteristics in XRD pattern and Raman spectra. Thickness of annealed thin films was ∼350nm measured via SEM cross-section image. The optical band gap and carrier concentration of samples were in the range of 2.13–2.16eV and 6.28×1017 to 3.11×1018cm−3, respectively. Based upon our observations, the 4.56at.% carbon-doped α-Fe2O3 thin film deposited via 80W RF power has a better PEC response with photocurrent density of ∼1.18mA/cm2 at 0.6V vs. SCE. This value was about three times higher than the un-doped film (0W of RF power, reference sample). Observed higher photocurrent density was likely due to a suitable carbon-doping concentration causing a higher carrier concentration. 出版者： Elsevier B.V 出版日期： 2015-07-05 出處： Journal of alloys and compounds, 2015-07, Vol.636, p.176-182 版權： 2015 Elsevier B.V. 識別號： ISSN: 0925-8388 識別號： EISSN: 1873-4669 識別號： DOI: 10.1016/j.jallcom.2015.02.166
