摘要： The influence of SiO2 and Si3N4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO2 layers, Si3N4 matrix imposes large interfacial surface energy on QDs and enhances their Ostwald ripening rate, appearing to be conducive for an improvement in crystallinity and a morphology change to a more perfectly spherical shape of Ge QDs. Quantum confinement induced electronic structure modulation for Ge QDs is observed to be strongly influenced not only by the QD size but also by the embedded matrix. Both matrix and surface effects offer additional mechanisms to QD itself for controlling the optical and thermal properties of the QDs. 其他題名： JPhysD 其他題名： J. Phys. D: Appl. Phys 出版者： IOP Publishing 出版日期： 2012-03-14 出處： Journal of physics. D, Applied physics, 2012-03, Vol.45 (10), p.105303-1-9 資源來源： Institute of Physics Journals 版權： 2012 IOP Publishing Ltd 識別號： ISSN: 0022-3727 識別號： EISSN: 1361-6463 識別號： DOI: 10.1088/0022-3727/45/10/105303 識別號： CODEN: JPAPBE
