中大學術數位典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/103892
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 94201/94201 (100%)
Visitors : 81629821      Online Users : 4837
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/103892


    Title: Optical, electrical and mechanical properties of Ga-doped ZnO thin films under different sputtering powers
    Authors: 張勝雄;Chang, Sheng Hsiung;Cheng, Hsin-Ming;Tien, Chuen-Lin;Lin, Shih-Chin;Chuang, Kie-Pin
    Contributors: 理學院光電科學與工程學系
    Keywords: Bending;Electric power generation;Electrical properties;Electron mobility;Exact sciences and technology;Fourier transforms;Instruments, apparatus, components and techniques common to several branches of physics and astronomy;Interferometers;Mechanical properties;Optical instruments, equipment and techniques;Optical properties;Physics;Thin films;Transparent conducing oxides;Zinc oxide
    Date: 2014-12-01
    Issue Date: 2026-04-23 11:39:19 (UTC+8)
    Publisher: Elsevier;Oxford: Elsevier B.V
    Abstract: 摘要: •GZO films were grown on glass at room temperature.•GZO film shows the low resistivity and high transmittance.•Transmittance spectrum was used to caculate the electron properties of GZO films.•Compressive bending force per unit width influences the electron mobility. We present the optical, electrical and mechanical properties of Ga-doped zinc oxide (GZO) thin films prepared by radio-frequency (RF) magnetron sputtering at room temperature under different RF powers (80–180W). The thickness, electron concentration, and electron mobility of the GZO thin film were determined by fitting the visible-to-near-infrared transmittance spectrum of GZO film/glass using the transfer matrix method. The bending force per unit width was measured by a home-made Twyman–Green interferometer with the fast Fourier transform method. The obtained results show that the optical, electrical and mechanical properties of GZO thin film are subject to the RF power. At an RF power of 140W, the local minimum of bending force per unit width corresponds to the highest electron mobility in GZO thin film. This study demonstrates that the optical, electrical and mechanical properties of GZO thin film can be fully resolved by non-contact optical methods.
    出版者: Oxford: Elsevier B.V
    出版日期: 2014-12-01
    出處: Optical materials, 2014-12, Vol.38, p.87-91
    資源來源: Elsevier ScienceDirect Journals: Bodleian Libraries collection
    版權: 2014 Elsevier B.V.
    版權: 2015 INIST-CNRS
    識別號: ISSN: 0925-3467
    識別號: EISSN: 1873-1252
    識別號: DOI: 10.1016/j.optmat.2014.10.004
    Appears in Collections:[Department of Optics and Photonics] journal & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML23View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明