摘要： In this study, the nano-scale epi-Ge/Si fabrication and the Schottky junction source/drain manufacture with Ni incorporation are demonstrated. The Ni Schottky junction formation by laser annealing (LA) and rapid thermal annealing, as well as the barrier height and interface characteristics, are discussed. Improvement in the density of interface trap (Dit) can be achieved by LA; this technology enhances the opportunity of high Ge concentration SiGe channel to play a part in the next-generation complementary metal-oxide-semiconductor applications. 出版者： Amsterdam: Elsevier B.V 出版日期： 2012-02-01 出處： Thin solid films, 2012-02, Vol.520 (8), p.3379-3381 版權： 2011 版權： 2015 INIST-CNRS 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2011.10.083 識別號： CODEN: THSFAP
