摘要： The defects created by scanning probe lithography (SPL) under ambient conditions in CVD grown graphene were investigated using atomic force microscopy, micro-Raman (μ-RS) and micro-X-ray photoelectron spectroscopy (μ-XPS). Topographically, both protrusion and depression structures with distinguishable tribological properties were produced simultaneously. However, the key aspects of the spectroscopy were similar for the two topographies. μ-RS revealed that the ratio of the defect Raman peaks (ID/ID′) and the effective distance between defects (LD) had similar magnitude and dependence on the applied bias voltage. μ-XPS revealed no evidence of the generation of sp3-type defects. The small amplitude of the C–O peak and absence of CO and C–OH peaks, suggested a complete absence of graphene oxide in the defect areas. Our results indicate that similar defects are present in both depressions and protrusions and suggest that a common active mechanism, namely bond reconstruction, is responsible for both structures. 出版者： Kidlington: Elsevier Ltd 出版日期： 2014-12-01 出處： Carbon (New York), 2014-12, Vol.80, p.318-324 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2014 Elsevier Ltd 版權： 2015 INIST-CNRS 識別號： ISSN: 0008-6223 識別號： EISSN: 1873-3891 識別號： DOI: 10.1016/j.carbon.2014.08.070 識別號： CODEN: CRBNAH
